RD1004LS-SB5
Sanyo Semicon Device
Ultrahigh-Speed Switching Diodewww.DataSheet.co.kr
Ordering number : ENA1615
RD1004LS-SB5
SANYO Semiconductors
DATA SHEET
RD1004LS-SB5
Features
• • • • •
Diffused Junction Type Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=400V). High reliabili
RD1006LN
Sanyo Semicon Device
High-Speed Switching Diodewww.DataSheet.co.kr
Ordering number : ENA1442
RD1006LN
SANYO Semiconductors
DATA SHEET
RD1006LN
Features
• • • • •
Diffused Junction Silicon Diode
Low VF • High-Speed Switching Diode
High breakdown voltage (VRRM=600V). High reliability. One
RD1006LS
Sanyo Semicon Device
Ultrahigh-Speed Switching Diodewww.DataSheet.co.kr
Ordering number : ENA1208
RD1006LS
SANYO Semiconductors
DATA SHEET
RD1006LS
Features
• • • •
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=600V). High reliability. One-point fix
RD1006LS-SB5
Sanyo Semicon Device
Ultrahigh-Speed Switching Diodewww.DataSheet.co.kr
Ordering number : ENA1608
RD1006LS-SB5
SANYO Semiconductors
DATA SHEET
RD1006LS-SB5
Features
• • • • •
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=600V). High reliability. E
RD100E
NEC
500 mW DHD ZENER DIODE DO-35DATA SHEET
ZENER DIODES
RD2.0E to RD200E
500 mW DHD ZENER DIODE (DO-35)
DESCRIPTION
NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of
RD100HHF1
Mitsubishi Electric Semiconductor
MOS FETwww.DataSheet.co.kr
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION
RD100HHF1 is a MOS FET type transistor specificall
RD100S
NEC
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLDDATA SHEET
ZENER DIODES
RD2.0S to RD120S
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD
DESCRIPTION
Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW.
PACKAGE DIMENSIONS
(in millimet