Datasheet RCR1525SI Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RCR1525SI	P-Channel Enhancement Mode Field Effect Transistor RCR1525SI P-Channel Enhancement Mode Field Effect Transistor z Features VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON). z General Description This P-Channel enhancement mode power FETs are produced with high cell densi	RCR

RCR152 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RCR1525SI	P-Channel Enhancement Mode Field Effect Transistor RCR1525SI P-Channel Enhancement Mode Field Effect Transistor z Features VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON). z General Description This P-Channel enhancement mode power FETs are produced	RCR
RCR1526SQ	P-Channel Enhancement Mode Field Effect Transistor RCR1526SQ P-Channel Enhancement Mode Field Effect Transistor z Features VDS(V) = -30V, ID = -5.2A, RDS(ON) = 51mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High density cell design for low RDS(ON). very small outline surface mount package. z Pin Configuration DDD D z Gene	RCR

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Número de pieza	Descripción	Fabricantes	PDF
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