RBV810
EIC discrete Semiconductors
SILICON BRIDGE RECTIFIERSRBV800 - RBV810
PRV : 50 - 1000 Volts Io : 8.0 Amperes
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed c
RBV810D
EIC discrete Semiconductors
SILICON BRIDGE RECTIFIERSRBV800D - RBV810D
PRV : 50 - 1000 Volts Io : 8.0 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅3.2 ± 0.1 20 ± 0.3
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse