파트넘버.co.kr RBV2510D 데이터시트 검색

RBV2510D 전자부품 데이터시트



RBV2510D 전자부품 회로 및
기능 검색 결과



RBV2510D  

EIC discrete Semiconductors
EIC discrete Semiconductors

RBV2510D

SILICON BRIDGE RECTIFIERS

RBV2500D - RBV2510D PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printe




관련 부품 RBV251 상세설명

RBV2510  

  
SILICON BRIDGE RECTIFIERS

RBV2500 - RBV2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation



EIC discrete Semiconductors
EIC discrete Semiconductors

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RBV2510  

  
Silicon Bridge Rectifiers

RBV25005-RBV2510 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A Features Rating to 1000V PRV Surge overload rating to 200 Am peres peak Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded plas tic technique res ults in inexpens ive product Lead



LGE
LGE

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RBV2510  

  
Silicon Bridge Rectifiers

Production specification Silicon Bridge Rectifiers RBV25005--RBV2510 FEATURES  Rating to 1000V PRV  Surge overload rating to 300 Amperes peak  Ideal for printed circuit board  Reliable low cost construction utilizing molded Pb Lead-free plastic technique results in inexpensive prod



Galaxy Microelectronics
Galaxy Microelectronics

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