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Datasheet RB715 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | RB715 | Schottky Barrier Diode DIODES SERIES SHANGHAI TAIYONG 60mA Schottky Brrier Diode RB715
¤W®ü¥x¥Ã°Ó¶T¦³--¤½¥q TEL:86-21-62540485 TEL:86-769-5373287
SHANGHAI TAIYONG CO.,LTD FAX:86-21-62431395 (SHANGHAI,CHINA) FAX:86-769-5373286 (DONG-GUAN,CHINA)
YAHOO MESSENGER:SHANGHAI-TAIYONG http://www.shanghai-taiyong.c |
 Shanghai Sunrise Electronics |
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| 15 | RB715F | SCHOTTKY BARRIER DIODE 1. 01 REF
RB715F SCHOTTKY BARRIER DIODE
FEATURES:
Power dissipation PD: 200 mW (Tamb=25℃)
Collector current IF: 30 mA
Collector-base voltage VR: 40 V
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
CIRCUIT:
1. 30¡ À0. 03
SOT-323
1. 25¡ À0. 05 2. 30¡ À0. 05
Uni |
 Transys |
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| 14 | RB715F | Schottky Barrier Diode BL Galaxy Electrical
Schottky Barrier Diode
FEATURES
z Extra small power mold type. z Low VF. z High reliability.
Pb
Lead-free
Production specification
RB715F
APPLICATIONS
z General purpose application.
ORDERING INFORMATION
Type No.
Marking
RB715F
3D
SOT-323
Package Code SOT-323
MAXIMUM RA |
 Galaxy Semi-Conductor |
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| 13 | RB715F | Shottky barrier diode SMD Type
Shottky barrier diode RB715F
Diodes
Features
Small mold type. (UMD3) High reliability.
Absolute Maximum Ratings Ta = 25
P aram eter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc) * Junction temperature Stor |
 Kexin |
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