|
|
Datasheet R8002ANJ Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | R8002ANJ | Power MOSFET, Transistor R8002ANJ
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
800V 4.3W 2A 40W
lOutline
LPT(S) (SC-83)
(2)
(1) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Ga | ROHM Semiconductor | mosfet |
R80 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | R8001CND | Power MOSFET, Transistor R8001CND
Nch 800V 1A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
800V 8.7Ω ±1A 36W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant
lOutline
TO-252
SC-63
CPT3
� ROHM Semiconductor mosfet | | |
2 | R8002ANJ | Power MOSFET, Transistor R8002ANJ
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
800V 4.3W 2A 40W
lOutline
LPT(S) (SC-83)
(2)
(1) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Ga ROHM Semiconductor mosfet | | |
3 | R8002ANX | Nch 800V 2A Power MOSFET R8002ANX
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
Features 1) Low on-resistance.
800V 4.3 2A 36W
Outline
TO-220FM
Inner circuit
(1) (2) (3) (2)
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple.
(1) ROHM Semiconductor mosfet | | |
4 | R8002CND | Power MOSFET, Transistor R8002CND
Nch 800V 1A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
800V 4.3Ω ±2A 69W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant
lOutline
TO-252
SC-63
CPT3
� ROHM Semiconductor mosfet | | |
5 | R8005ANJ | Power MOSFET, Transistor R8005ANJ
Nch 800V 5A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
800V 2.08W
5A 40W
lOutline
LPT(S) (SC-83)
(2)
(1) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) G ROHM Semiconductor mosfet | | |
6 | R8008ANJ | Power MOSFET, Transistor R8008ANJ
Nch 800V 8A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
800V 0.98W
8A 40W
lOutline
LPT(S) (SC-83)
(2)
(1) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) G ROHM Semiconductor mosfet | | |
7 | R8008ANX | Nch 800V 8A Power MOSFET R8008ANX
Nch 800V 8A Power MOSFET
Datasheet
VDSS
800V
lOutline
RDS(on)(Max.)
1.03Ω
ID
±8A
TO-220FM
PD
66W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits ca ROHM Semiconductor mosfet | |
Esta página es del resultado de búsqueda del R8002ANJ. Si pulsa el resultado de búsqueda de R8002ANJ se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |