Datasheet R6012FNX Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	R6012FNX	Drive Nch MOSFET Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage 　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy.	ROHM Semiconductor

R6012 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
R6012ANX	Drive Nch MOSFET R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be si	ROHM Semiconductor
R6012FNX	Drive Nch MOSFET Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage 　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Par	ROHM Semiconductor
R6012ANJ	Drive Nch MOSFET 10V Drive Nch MOSFET R6012ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 7	ROHM Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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