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Datasheet R1RW0408D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 R1RW0408D   4M High Speed SRAM

R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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datasheet R1RW0408D pdf
3 R1RW0408DGE-0PR   4M High Speed SRAM

R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
Renesas
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datasheet R1RW0408DGE-0PR pdf
2 R1RW0408DGE-2LR   4M High Speed SRAM

R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
Renesas
Renesas
datasheet R1RW0408DGE-2LR pdf
1 R1RW0408DGE-2PR   4M High Speed SRAM

R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
Renesas
Renesas
datasheet R1RW0408DGE-2PR pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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