QP1T 전자부품 데이터시트

QPA3230 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz RFMD + TriQuint = Qorvo QPA3230 The QPA3230 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has extremely high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linear

Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Applications QPD0050 75 W, DC to 3.6 GHz 48V GaN RF Power Transistor 6 Pin 7.2x6.6mm DFN Product Features • Operating Frequency Range: DC t

QPA3240 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz RFMD + TriQuint = Qorvo QPA3240 The QPA3240 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has extremely high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linear

Applications • Receiver Front End Building Block QPM1000 2 -20 GHz Limiter/Low-Noise Amplifier Product Features • Frequency Range: 2 – 20 GHz • Input Power CW Survivability: 4 W • Gain: > 17 dB • Adjustable gain (> 30 dB using VG2) • Noise Figure: < 2.0 dB (3-12 GHz) < 4.0 dB (ou

Applications  Repeaters / DAS  Mobile Infrastructure  Defense Communications  General Purpose Wireless QPA9119 ½ W High Linearity Amplifier Product Features  400-4200 MHz  +27.2 dBm P1dB  +44 dBm Output IP3  17 dB Gain at 2140 MHz  +5 V Single Supply, 130 mA ICQ  I