QL65F6S-B
QSI
LASER DIODEQSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :. Model : QL65F6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65F6S-A/B/C
I
QL65F6S-A
LASER DIODEQSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :. Model : QL65F6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65F6S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor
QSI
PDF
QL65F6S-C
LASER DIODEQSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :. Model : QL65F6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65F6S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor
QSI
PDF
QL65F6SA
InGaAlP Laser Diode
QL65F6SA
InGaAlP Laser Diode
2003 Rev 0
♦OVERVIEW
QL65F6SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Op
Roithner Lasertechnik
PDF