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Datasheet PZT2907A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | PZT2907A | PNP Silicon Planar Epitaxial Transistor PZT2907A
PNP Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25 C Junction Temperature Storage, Temperature
BASE 1
Symbol VCEO VCB |
 WEITRON |
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| 11 | PZT2907A | Suface Mount Si-Epitaxial Planar Switching Transistors PZT2907 / PZT2907A
PZT2907 / PZT2907A
PNP
Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage
Version 2006-05-09
6.5±0.2 3±0.1
4
1.65
Power dissipation Verlustleistung Plastic case Kunststoffgehäuse
Type Code
1 0.7 2.3 |
 Diotec |
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| 10 | PZT2907A | Silicon Planar Medium Power Transistor Elektronische Bauelemente
PZT2907A
PNP Silicon Silicon Planar Medium Power Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications.
SOT |
 SeCoS |
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| 9 | PZT2907A | PNP GENERAL PURPOSE AMPLIFIER UNISONIC TECHNOLOGIES CO., LTD
PZT2907A
Preliminary
PNP SILICON TRANSISTOR
PNP GENERAL PURPOSE AMPLIFIER
DESCRIPTION
This UTC PZT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.
ORDERING INFORMATION
Ordering Number
Lead Free
H |
 Unisonic Technologies |
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