PZT2222AT1 전자부품 데이터시트

SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) ■ Features ● Epitaxial planar die construction ● Complementary to PZT2907A SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 123 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Col

Elektronische Bauelemente RoHS Compliant Product PZT2222A NPN Silicon General Purpose Transistor C FEATURES Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.6 A Collector-base voltage V (BR)CBO : 75 V Operating and storage junction temperature range T JˈTstg: -55ć

PZT2222 / PZT2222A PZT2222 / PZT2222A NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage Version 2006-05-09 6.5±0.2 3±0.1 4 1.65 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Type Code 1 0.7 2.3

PZT2222A NPN Silicon Planar Epitaxial Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BASE 1 COLLECTOR 2, 4 3 EM ITTER SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 4 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Diss

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier July 2014 MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C E SOT-23 Mark:1P B Figure 1.

PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1