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Datasheet PYA28C16 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | PYA28C16 | EEPROM FEATURES
Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply
Fast Byte Write (200µs or 1 ms)
Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current
Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs
PYA28C16
2K X 8 EEPROM
Enduranc |
 PYRAMID |
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| 1 | PYA28C16B | EEPROM FEATURES
Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply
Byte Write Cycle Time - 10 ms Maximum
Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current
Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs
PYA28C16B
2K X 8 EEPROM
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PYRAMID |
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