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Datasheet PXAC261002FC Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 PXAC261002FC   Thermally-Enhanced High Power RF LDMOS FET

PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include
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Infineon
datasheet PXAC261002FC pdf

PXAC26100 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PXAC261002FC

Thermally-Enhanced High Power RF LDMOS FET

PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency ban
Infineon
Infineon
datasheet pdf - Infineon


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