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Datasheet PV60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | PV60 | Diode ( Rectifier ) |
 American Microsemiconductor |
 |
| 6 | PV600BA | N-Channel Enhancement Mode MOSFET PV600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.8mΩ @VGS = 10V
ID 10A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Dra |
 UNIKC |
|
| 5 | PV601CA | N&P-Channel Enhancement Mode MOSFET PV601CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 22mΩ @VGS =10V
-30V
28mΩ @VGS = -10V
ID 7A -6.4A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS |
UNIKC |
|
| 4 | PV604CA | N&P-Channel Enhancement Mode MOSFET PV604CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 25mΩ @VGS =10V
-40V
35mΩ @VGS = -10V
ID 6A -5.5A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40 VDS |
UNIKC |
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