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Datasheet PTFB192503EL Equivalent ( PDF ) |
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1 | PTFB192503EL | Thermally-Enhanced High Power RF LDMOS FETs PTFB192503EL PTFB192503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include in |
Infineon Technologies |
PTFB19250 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PTFB192503EL | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon Technologies |
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PTFB192503FL | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon Technologies |
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