Datasheet PTFB191501E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTFB191501E	Thermally-Enhanced High Power RF LDMOS FETs Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and out	Infineon Technologies

PTFB1915 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTFB191501F	Thermally-Enhanced High Power RF LDMOS FETs Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features i	Infineon Technologies
PTFB191501E	Thermally-Enhanced High Power RF LDMOS FETs Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features i	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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