PTFB183404E
Infineon
High Power RF LDMOS Field Effect TransistorsPTFB183404E PTFB183404F
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz
PTFB183408SV
High Power RF LDMOS Field Effect TransistorPTFB183408SV
High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz
Description
The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,
Infineon Technologies
PDF
PTFB183404F
High Power RF LDMOS Field Effect TransistorsPTFB183404E PTFB183404F
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input
Infineon
PDF