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PTFB183404E 전자부품 데이터시트



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PTFB183404E  

Infineon
Infineon

PTFB183404E

High Power RF LDMOS Field Effect Transistors

PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz




관련 부품 PTFB18340 상세설명

PTFB183408SV  

  
High Power RF LDMOS Field Effect Transistor

PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,



Infineon Technologies
Infineon Technologies

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PTFB183404F  

  
High Power RF LDMOS Field Effect Transistors

PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input



Infineon
Infineon

PDF




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