Datasheet PTFA220041M Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTFA220041M	High Power RF LDMOS Field Effect Transistor PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offer	Infineon

PTFA2200 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTFA220081M	High Power RF LDMOS Field Effect Transistor PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS t	Infineon
PTFA220041M	High Power RF LDMOS Field Effect Transistor PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. Thi	Infineon

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Número de pieza	Descripción	Fabricantes	PDF
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