|
|
Datasheet PTFA212002E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | PTFA212002E | Thermally-Enhanced High Power RF LDMOS FET PTFA212002E
Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz
Description
The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced |
Infineon |
PTFA2120 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PTFA212001E | Thermally-Enhanced High Power RF LDMOS FET |
Infineon |
|
PTFA212002E | Thermally-Enhanced High Power RF LDMOS FET |
Infineon |
|
PTFA212001F | Thermally-Enhanced High Power RF LDMOS FET |
Infineon |
Esta página es del resultado de búsqueda del PTFA212002E. Si pulsa el resultado de búsqueda de PTFA212002E se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |