Datasheet PTFA211801E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTFA211801E	Thermally-Enhanced High Power RF LDMOS FET IM3 (dBc), ACPR (dBc) not DrainrecommenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended fo	Infineon

PTFA2118 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTFA211801F	Thermally-Enhanced High Power RF LDMOS FET PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-	Infineon
PTFA211801E	Thermally-Enhanced High Power RF LDMOS FET IM3 (dBc), ACPR (dBc) not DrainrecommenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched L	Infineon

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