Datasheet PTFA211001E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTFA211001E	Thermally-Enhanced High Power RF LDMOS FET PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. T	Infineon

PTFA2110 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTFA211001E	Thermally-Enhanced High Power RF LDMOS FET PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from	Infineon

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