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PTFA181001E 전자부품 데이터시트



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PTFA181001E  

Infineon Technologies
Infineon Technologies

PTFA181001E

Thermally-Enhanced High Power RF LDMOS FET

PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Feat




관련 부품 PTFA18100 상세설명

PTFA181001HL  

  
Thermally-Enhanced High Power RF LDMOS FET

Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications



Infineon Technologies
Infineon Technologies

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PTFA181001GL  

  
Thermally-Enhanced High Power RF LDMOS FET

Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications



Infineon Technologies
Infineon Technologies

PDF



PTFA181001F  

  
Thermally-Enhanced High Power RF LDMOS FET

PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching,



Infineon Technologies
Infineon Technologies

PDF




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