PTFA181001E
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETPTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Feat
PTFA181001HL
Thermally-Enhanced High Power RF LDMOS FETPreliminary PTFA181001GL PTFA181001HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications
Infineon Technologies
PDF
PTFA181001GL
Thermally-Enhanced High Power RF LDMOS FETPreliminary PTFA181001GL PTFA181001HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications
Infineon Technologies
PDF
PTFA181001F
Thermally-Enhanced High Power RF LDMOS FETPTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching,
Infineon Technologies
PDF