PTFA091201HL
Infineon
Thermally-Enhanced High Power RF LDMOS FETsPTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
Description
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier a
PTFA091201GL
Thermally-Enhanced High Power RF LDMOS FETsPTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
Description
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
Infineon
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PTFA091201E
Thermally-Enhanced High Power RF LDMOS FETsPTFA091201E PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Feat
Infineon
PDF
PTFA091201F
Thermally-Enhanced High Power RF LDMOS FETsPTFA091201E PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Feat
Infineon
PDF