파트넘버.co.kr PTFA091201HL 데이터시트 검색

PTFA091201HL 전자부품 데이터시트



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기능 검색 결과



PTFA091201HL  

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PTFA091201HL

Thermally-Enhanced High Power RF LDMOS FETs

PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier a




관련 부품 PTFA091201 상세설명

PTFA091201GL  

  
Thermally-Enhanced High Power RF LDMOS FETs

PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.



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Infineon

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PTFA091201E  

  
Thermally-Enhanced High Power RF LDMOS FETs

PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Feat



Infineon
Infineon

PDF



PTFA091201F  

  
Thermally-Enhanced High Power RF LDMOS FETs

PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Feat



Infineon
Infineon

PDF




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