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PTFA071701E 전자부품 데이터시트



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PTFA071701E  

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PTFA071701E

Thermally-Enhanced High Power RF LDMOS FETs

PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 72




관련 부품 PTFA07170 상세설명

PTFA071701F  

  
Thermally-Enhanced High Power RF LDMOS FETs

PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features in



Infineon
Infineon

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