PTFA071701E
Infineon
Thermally-Enhanced High Power RF LDMOS FETsPTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz
Description
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 72
PTFA071701F
Thermally-Enhanced High Power RF LDMOS FETsPTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz
Description
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features in
Infineon
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