PTF211802
Infineon Technologies AG
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHzPTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallizati
PTF211802A
Infineon Technologies AG
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHzPTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallizati
PTF211802E
Infineon Technologies AG
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHzPTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallizati