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PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Nitride surface passivation and full gold metallization ensur
PTF 10161 165 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride surface passivation
PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface passivation and full
PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride surface passivation and full go
PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure
PTF 10138 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. It operates at 48% efficiency with 12.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device
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