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PTF10193 전자부품 데이터시트



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PTF10193  

Ericsson
Ericsson

PTF10193

12 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18




관련 부품 PTF101 상세설명

PTF10195  

  
125 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor

PTF 10195 125 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensur



Ericsson
Ericsson

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PTF10162  

  
18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Nitride surface passivation and full gold metallization ensur



Ericsson
Ericsson

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PTF10161  

  
165 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor

PTF 10161 165 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride surface passivation



Ericsson
Ericsson

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PTF10154  

  
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor

PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface passivation and full



Ericsson
Ericsson

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PTF10153  

  
60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride surface passivation and full go



Ericsson
Ericsson

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PTF10139  

  
60 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure



Ericsson
Ericsson

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