Datasheet PTF10112 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTF10112	60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivati	Ericsson

PTF10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTF10160	85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization	Ericsson
PTF10107	5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ens	Ericsson
PTF10111	6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensur	Ericsson

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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