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PTF10100 전자부품 데이터시트



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PTF10100  

Ericsson
Ericsson

PTF10100

165 Watts/ 860-900 MHz LDMOS Field Effect Transistor

e PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 w




관련 부품 PTF101 상세설명

PTF10195  

  
125 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor

PTF 10195 125 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensur



Ericsson
Ericsson

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PTF10162  

  
18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Nitride surface passivation and full gold metallization ensur



Ericsson
Ericsson

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PTF10161  

  
165 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor

PTF 10161 165 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride surface passivation



Ericsson
Ericsson

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PTF10154  

  
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor

PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface passivation and full



Ericsson
Ericsson

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PTF10153  

  
60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride surface passivation and full go



Ericsson
Ericsson

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PTF10139  

  
60 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure



Ericsson
Ericsson

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