Datasheet PTF10036 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTF10036	85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor PTF 10036 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure excellent device lifetime an	Ericsson

PTF10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTF10160	85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization	Ericsson
PTF10107	5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ens	Ericsson
PTF10111	6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensur	Ericsson

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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