Datasheet PTF10020 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTF10020	125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor PTF 10020 125 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and r	Ericsson

PTF10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTF10160	85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization	Ericsson
PTF10107	5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ens	Ericsson
PTF10111	6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensur	Ericsson

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Número de pieza	Descripción	Fabricantes	PDF
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