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PTF080901F 전자부품 데이터시트



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기능 검색 결과



PTF080901F  

Infineon Technologies AG
Infineon Technologies AG

PTF080901F

LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifet




관련 부품 PTF08090 상세설명

PTF080901  

  
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • B



Infineon Technologies AG
Infineon Technologies AG

PDF



PTF080901E  

  
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • B



Infineon Technologies AG
Infineon Technologies AG

PDF




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