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Datasheet PTF080601F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | PTF080601F | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ |
Infineon Technologies AG |
PTF0806 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PTF080601E | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon Technologies AG |
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PTF080601F | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon Technologies AG |
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PTF080601A | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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