PTF080601E
Infineon Technologies AG
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzDevelopmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excell
PTF080601F
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzDevelopmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ
Infineon Technologies AG
PDF
PTF080601A
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzDevelopmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ
Infineon Technologies AG
PDF
PTF080601
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzDevelopmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ
Infineon Technologies AG
PDF