파트넘버.co.kr PTF080601E 데이터시트 검색

PTF080601E 전자부품 데이터시트



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기능 검색 결과



PTF080601E  

Infineon Technologies AG
Infineon Technologies AG

PTF080601E

LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excell




관련 부품 PTF08060 상세설명

PTF080601F  

  
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ



Infineon Technologies AG
Infineon Technologies AG

PDF



PTF080601A  

  
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ



Infineon Technologies AG
Infineon Technologies AG

PDF



PTF080601  

  
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ



Infineon Technologies AG
Infineon Technologies AG

PDF




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