PTF080451
Infineon Technologies AG
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHzPTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifet
PTF080451E
Infineon Technologies AG
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHzPTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifet