PTB20157 전자부품 데이터시트

e PTB 20174 90 Watts, 1400–1600 MHz RF Power Transistor Description The 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitri

e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implanta

e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implanta

e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications. Ion implantation,

e PTB 20166 23 Watts, 675–925 MHz Common Base RF Power Transistor Description The 20166 is an NPN, common base RF power transistor intended for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications. Ion implant

e PTB 20162 40 Watts, 470–900 MHz RF Power Transistor Description The 20162 is an NPN common emitter RF power transistor intended for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride su