PSMN038-100K
NXP Semiconductors
N-channel enhancement mode field-effect transistor
PSMN038-100K
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001 Product specification
1. Description
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-s
PSMN038-100YL
N-channel MOSFETLFPAK56
PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
1 May 2013
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide ra
NXP Semiconductors
PDF