Datasheet PSMN009-100P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PSMN009-100P	N-channel enhancement mode field-effect transistor PSMN009-100P/100B N-channel enhancement mode ﬁeld-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in	Philips

PSMN009-1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PSMN009-100W	N-channel TrenchMOS transistor Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN009-100W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS =	Philips
PSMN009-100P	N-channel enhancement mode field-effect transistor PSMN009-100P/100B N-channel enhancement mode ﬁeld-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN009-100P in SOT78 (TO-22	Philips
PSMN009-100B	N-channel enhancement mode field-effect transistor PSMN009-100P/100B N-channel enhancement mode ﬁeld-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN009-100P in SOT78 (TO-22	Philips

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Número de pieza	Descripción	Fabricantes	PDF
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