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PSMN009-100B 전자부품 데이터시트



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PSMN009-100B  

Philips
Philips

PSMN009-100B

N-channel enhancement mode field-effect transistor

PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN009-




관련 부품 PSMN009-10 상세설명

PSMN009-100P  

  
N-channel enhancement mode field-effect transistor

PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in



Philips
Philips

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PSMN009-100W  

  
N-channel TrenchMOS transistor

Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN009-100W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g



Philips
Philips

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