PSMN009-100B
Philips
N-channel enhancement mode field-effect transistorPSMN009-100P/100B
N-channel enhancement mode field-effect transistor
Rev. 01 — 29 April 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN009-
PSMN009-100P
N-channel enhancement mode field-effect transistorPSMN009-100P/100B
N-channel enhancement mode field-effect transistor
Rev. 01 — 29 April 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in
Philips
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PSMN009-100W
N-channel TrenchMOS transistorPhilips Semiconductors
Objective specification
TrenchMOS™ transistor
PSMN009-100W
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 100 A
g
Philips
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