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Datasheet PN3567 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PN3567 | NPN SILICON TRANSISTOR |  Micro Electronics | transistor |
| 2 | PN3567 | Small Signal Transistors Small Signal Transistors TO-92 Case (Continued)
TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30 |  Central Semiconductor Corp | transistor |
| 3 | PN3567 | NPN General Purpose Amplifier PN3567
PN3567
NPN General Purpose Amplifier
• This device is for use as a medium amplifier and switch requiring collector currents up 300mA. • Sourced from process 19.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC T |  Fairchild Semiconductor | amplifier |
| 4 | PN3567 | Trans GP BJT NPN 40V 0.5A 3-Pin TO-92 Box |  New Jersey Semiconductor | data |
PN3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PN300 | Silicon PIN Photodiodes PIN Photodiodes
PNZ0300, PNZ300F
Silicon PIN Photodiodes
PNZ0300
ø4.6±0.15 Glass lens
Unit : mm
For optical control systems Features
Fast response which is well suited to high speed modulated light detection Wide spectral sensitivity Low dark current and low noise Good photo current linearity a  Panasonic Semiconductor diode | | |
| 2 | PN300F | Silicon PIN Photodiodes PIN Photodiodes
PNZ0300, PNZ300F
Silicon PIN Photodiodes
PNZ0300
ø4.6±0.15 Glass lens
Unit : mm
For optical control systems Features
Fast response which is well suited to high speed modulated light detection Wide spectral sensitivity Low dark current and low noise Good photo current linearity a Panasonic Semiconductor diode | | |
| 3 | PN304V | SI PIN QUAD PHOTODIODE Panasonic Semiconductor diode | | |
| 4 | PN3053 | COMPLEMENTARY SILICON TRANSISTORS Micro Electronics transistor | | |
| 5 | PN3316 | SMD Power Inductors Unshielded
PN0805 , PN3316 & PN5022
SMD Power Inductors Unshielded
C/Severo Ochoa 33 – Parque Tecnológico de Andalucía. 29590 Campanillas .Málaga (Spain) Phone +34 951 231 320 Fax +34 951 231 321 E-mail: [email protected] Web http://www.grupopremo.com
1. Configuration &  Premo inductor | | |
| 6 | PN334 | PIN Photodiode PIN Photodiodes
PNZ334 (PN334)
PIN Photodiode
For optical fiber communication systems
5.0±0.2 3.0±0.3
ø4.8±0.2 ø4.4±0.2 C0.2
Features
Plastic type package (ø 5) High coupling capability suitable for plastic fiber High quantum efficiency High-speed response
0.5
0.8
0.6
26.0±0.1 1.5 1.5
Panasonic Semiconductor diode | | |
| 7 | PN3439 | NPN high-voltage transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN3439; PN3440 NPN high-voltage transistors
Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 1997 Sep 04
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES �  Philips transistor | |
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