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Phototransistors PN163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm 3.0±0.3 1.95±0.25 1.4±0.2 0.9 0.5 For optical control systems Features High sensitivity Fast response : tr = 4 µs (typ.) Adoption of visible light cutoff resin Ultraminiature, thin s
Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems 2.9±0.25 Unit: mm 4.5±0.3 (φ2.4) (2.4) (1.5) Not soldered ■ Features • High sensitivity • Fast response: tr = 4 µs (typ.) • Wide spectral sensitivity characteristics, suited for detect
PNZ121S (PN121S) NPN Unit : mm φ3.0±0.2 12.5 min. • • • • 4.1±0.3 I : tr = 1 µs (typ.) ( φ 3) 2.0±0.2 φ0.3±0.05 φ0.45±0.05 I Ta = 25°C VCEO VECO IC PC Topr Tstg 20 5 10 50 −25 ∼ +85 −30 ∼ +100 V V mA mW °C °C 1 0.9±0.15 2 1 : Emitter 2 :
PN1108 SMD Power Inductors Unshielded C/Severo Ochoa 33 – Parque Tecnológico de Andalucía. 29590 Campanillas .Má
PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in s
PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in s
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