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PN166 전자부품 데이터시트



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PN166  

Panasonic
Panasonic

PN166

Silicon PNP Phototransistor

Phototransistors PNA1601M (PN166) Silicon NPN Phototransistor For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs 12.5±1.0 0.8 0.5 max. Gate the rest Unit : mm 2.6




관련 부품 PN1 상세설명

PN163NC  

  
Silicon NPN Phototransistor

Phototransistors PN163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm 3.0±0.3 1.95±0.25 1.4±0.2 0.9 0.5 For optical control systems Features High sensitivity Fast response : tr = 4 µs (typ.) Adoption of visible light cutoff resin Ultraminiature, thin s



Panasonic Semiconductor
Panasonic Semiconductor

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PN158  

  
Silicon planar type For optical control systems

Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems 2.9±0.25 Unit: mm 4.5±0.3 (φ2.4) (2.4) (1.5) Not soldered ■ Features • High sensitivity • Fast response: tr = 4 µs (typ.) • Wide spectral sensitivity characteristics, suited for detect



Panasonic Semiconductor
Panasonic Semiconductor

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PN121S  

  
PN121S

PNZ121S (PN121S) NPN Unit : mm φ3.0±0.2 12.5 min. • • • • 4.1±0.3 I : tr = 1 µs (typ.) ( φ 3) 2.0±0.2 φ0.3±0.05 φ0.45±0.05 I Ta = 25°C VCEO VECO IC PC Topr Tstg 20 5 10 50 −25 ∼ +85 −30 ∼ +100 V V mA mW °C °C 1 0.9±0.15 2 1 : Emitter 2 :



Panasonic Semiconductor
Panasonic Semiconductor

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PN1108  

  
SMD Power Inductors Unshielded

PN1108













 SMD
Power
Inductors
Unshielded 




































 C/Severo Ochoa 33 – Parque Tecnológico de Andalucía. 29590 Campanillas .Má



Premo
Premo

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PN10HN60-CBI-T1  

  
N-Channel Superjunction MOSFET

PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in s



Chipown
Chipown

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PN10HN60-CAI-T1  

  
N-Channel Superjunction MOSFET

PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in s



Chipown
Chipown

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