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Datasheet PMWD18UN Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1PMWD18UNDual N-channel uTrenchMOS ultra low level FET

PMWD18UN M3D647 Dual N-channel µTrenchMOS™ ultra low level FET Rev. 02 — 23 February 2004 Product data 1. Product profile 1.1 Description Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Featur
NXP Semiconductors
NXP Semiconductors
data


PMW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PMW3310DH-AWQTLow Power LED Gaming Mouse Sensor

    PMW3310DH‐AWQT PMW3310DH-AWQT Low Power LED Gaming Mouse Sensor Description PMW3310DH-AWQT low power gaming sensor is a new addition to PixArt Imaging’s gaming sensor family. The tracking system comprises of navigation IC, HSDL-4261 IR LED and lens. It provides enhanced features such as
PixArt
PixArt
led
2PMWD15UNDual N-channel uTrenchMOS ultra low level FET

PMWD15UN Rev. 04 — 5 April 2005 Dual N-channel µTrenchMOS™ ultra low level FET Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.
NXP Semiconductors
NXP Semiconductors
data
3PMWD16UNDual N-channel uTrenchMOS ultra low level FET

PMWD16UN Rev. 02 — 24 March 2005 Dual N-channel µTrenchMOS™ ultra low level FET Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s
NXP Semiconductors
NXP Semiconductors
data
4PMWD18UNDual N-channel uTrenchMOS ultra low level FET

PMWD18UN M3D647 Dual N-channel µTrenchMOS™ ultra low level FET Rev. 02 — 23 February 2004 Product data 1. Product profile 1.1 Description Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Featur
NXP Semiconductors
NXP Semiconductors
data
5PMWD19UNDual uTrenchMOS ultra low level FET

PMWD19UN Dual µTrenchMOS™ ultra low level FET Rev. 01 — 20 December 2002 M3D647 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD19UN in
NXP Semiconductors
NXP Semiconductors
data
6PMWD20XNDual N-channel uTrenchMOS extremely low level FET

PMWD20XN Rev. 02 — 26 April 2005 Dual N-channel µTrenchMOS™ extremely low level FET Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology
NXP Semiconductors
NXP Semiconductors
data
7PMWD22XNDual N-channel uTrenchMOS extremely low level FET

PMWD22XN Rev. 01 — 15 August 2005 Dual N-channel µTrenchMOS extremely low level FET Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.
NXP Semiconductors
NXP Semiconductors
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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