Datasheet PMV56XN Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PMV56XN	extremely low level FET PMV56XN µTrenchMOS™ extremely low level FET Rev. 02 — 24 June 2004 M3D088 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s TrenchMOS™ technology s Low threshold voltage s	NXP Semiconductors

PMV5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PMV56XN	extremely low level FET PMV56XN µTrenchMOS™ extremely low level FET Rev. 02 — 24 June 2004 M3D088 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s TrenchMOS™ technology s Low	NXP Semiconductors
PMV50UPE	MOSFET ( Transistor ) PMV50UPE 20 July 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET techno	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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