PMN23UN
NXP Semiconductors
UTrenchMOS ultra low level FETPMN23UN
µTrenchMOS™ ultra low level FET
M3D302
Rev. 01 — 16 June 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s TrenchMOS™