Datasheet PMCM6501VNE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PMCM6501VNE	N-channel Trench MOSFET WLCSP6 PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage	NXP Semiconductors

PMCM6501 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PMCM6501VPE	P-channel Trench MOSFET WLCSP6 PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • L	NXP Semiconductors
PMCM6501VNE	N-channel Trench MOSFET WLCSP6 PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • L	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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