Datasheet PM513BA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PM513BA	P-Channel Enhancement Mode MOSFET PM513BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 100mΩ @VGS = -4.5V ID -3A SOT-23 (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Contin	UNIKC

PM51 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PM516BA	N-Channel Enhancement Mode MOSFET PM516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 30mΩ @VGS = 4.5V ID 5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±8 Continuous Drain Curren	UNIKC
PM514BA	N-Channel Enhancement Mode MOSFET PM514BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 40mΩ @VGS = 4.5V ID 3.3A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±8 Continuous Drain Curr	UNIKC
PM513BA	P-Channel Enhancement Mode MOSFET PM513BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 100mΩ @VGS = -4.5V ID -3A SOT-23 (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Volt	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
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