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Datasheet PK60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | PK60 | Diode ( Rectifier ) |
 American Microsemiconductor |
 |
| 5 | PK600BA | N-Channel Enhancement Mode MOSFET PK600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID 40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous |
 UNIKC |
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| 4 | PK601CA | N&P-Channel Enhancement Mode MOSFET PK601CA
N & P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS -30V
RDS(ON) 28mΩ @VGS = -10V
30V 22mΩ @VGS = 10V
ID CH. -22A Q2 23A Q1
PDFN 5*6P
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH. LIMI |
UNIKC |
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| 3 | PK608BA | N-Channel Enhancement Mode MOSFET PK608BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 3.5mΩ @VGS = 10V
ID 87A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous |
UNIKC |
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