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PPJX8839 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -200mA Features RDS(ON) , VGS@-10V, ID@-500mA<4Ω RDS(ON) , [email protected], ID@-200mA<6Ω RDS(ON) , [email protected], ID@-50mA<13Ω Advanced Trench Process Technology Specially Designed for Relay driver, Speed line
PPJX8807 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -500mA Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Load switch, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive
PPJX8805 30V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -30 V Current -0.5A SOT-563 Features RDS(ON) , [email protected], [email protected]<390mΩ RDS(ON) , [email protected], [email protected]<560mΩ RDS(ON) , [email protected], [email protected]<990mΩ Advanced Trench Process Technology Specially Desi
PPJX8804 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 0.6A SOT-563 Features RDS(ON) , VGS@4,5V, [email protected]<220mΩ RDS(ON) , [email protected], [email protected]<290mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Designed fo
PPJX8803 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -0.6A SOT-563 Features RDS(ON) , [email protected], [email protected]<340mΩ RDS(ON) , [email protected], [email protected]<420mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Desi
PPJX8802 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 0.7A SOT-563 Features RDS(ON) , VGS@4,5V, [email protected]<150mΩ RDS(ON) , [email protected], [email protected]<220mΩ RDS(ON) , [email protected], [email protected]<400mΩ Advanced Trench Process Technology Specially Designed fo
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