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PPJS6834 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 750mA Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive.
PPJS6833 30V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -30 V Current -1.1A SOT-23 6L Features RDS(ON) , VGS@-4,5V, [email protected]<370mΩ RDS(ON) , [email protected], [email protected]<540mΩ RDS(ON) , [email protected], [email protected]<970mΩ Advanced Trench Process Technology Specially De
PPJS6832 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 1.6A SOT-23 6L Features RDS(ON) , VGS@4,5V, [email protected]<200mΩ RDS(ON) , [email protected], [email protected]<270mΩ RDS(ON) , [email protected], [email protected]<570mΩ Advanced Trench Process Technology Specially Designed
PPJS6812 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 3.7A Features RDS(ON) , [email protected], [email protected]<56mΩ RDS(ON) , [email protected], [email protected]<69mΩ RDS(ON) , [email protected], [email protected]<98mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application
PPJS6809 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -2.6A Features RDS(ON) , VGS@-10V, [email protected]<115mΩ RDS(ON) , [email protected], [email protected]<150mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in complianc
PPJS6806 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4A Features RDS(ON) , VGS@10V, [email protected]<48mΩ RDS(ON) , [email protected], [email protected]<70mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU
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